Enhanced Efficiency of GaAs Single-Junction Solar Cells with Inverted-Cone-Shaped Nanoholes Fabricated Using Anodic Aluminum Oxide Masks
Figure 2
(a) Top- and (b) tilt-view FE-SEM images of the nanohole arrays formed on the InGaP window layer after ICP etching. The nanoholes have inverted-cone-shaped form with a top diameter of about 50 nm and a depth of about 64 nm after 40 s etching. The inset in (b) shows a magnification of the inverted-cone-shaped nanoholes.
