Isolation of III-V/Ge Multijunction Solar Cells by Wet Etching

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="583867.fig.004a" src="https://static.hindawi.com/articles/ijp/volume-2013/583867/figures/583867.fig.004a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b>Top view image showing the holes through the transparent SiO<sub>2</sub> mask</td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="583867.fig.004b" src="https://static.hindawi.com/articles/ijp/volume-2013/583867/figures/583867.fig.004b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b>Cross-sectional SEM image of a heterostructure containing a hole</td></tr></table></td></tr></table>

<table>Holes in the III-V layers underneath the intact SiO<sub>2</sub> mask.</table>

International Journal of Photoenergy

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Figure 4

Figure 4: Isolation of III-V/Ge Multijunction Solar Cells by Wet Etching 