Isolation of III-V/Ge Multijunction Solar Cells by Wet Etching

Figure 6

Process flow of III-V/Ge solar cell fabrication including the developed isolation step.

(a) MJSC solar cell structure

(b) Stress-compensating mask layer deposition

(c) Patterning of the etching mask

(d) Etching of isolation trenches in III-V layers and Ge

(e) Mask removal

(f) Contact layer etching

(g) Deposition of passivation and antireflection coating

(h) Deposition of front and back side electrical contacts

(i) Saw dicing to singulate individual cells