Isolation of III-V/Ge Multijunction Solar Cells by Wet Etching

Table 1

Hole density for different thin dielectrics used as etching mask.

Dielectric material	Radio frequency	Nature of intrinsic; stress; (on Si)	Value of intrinsic stress (on Si); (dyn/cm^2)	Hole density (cm^−2)
SiO2	380 kHz	Compressive	−2 × 10^9	310
SiO2	13.56 MHz	Compressive	−2 × 10^10	870
Si𝑥N𝑦	380 kHz	Compressive	−7.6 × 10^9	160
Si𝑥N𝑦	13.56 MHz	Tensile	+5.2 × 10^9	60