Effect of Growth Parameters and Annealing Atmosphere on the Properties of Cu₂ZnSnS₄ Thin Films Deposited by Cosputtering

Figure 2

SEM images of CZTS thin films deposited with target powers Cu : SnS : ZnS: 15 : 30 : 80 W and annealed at 500°C (a) H₂S  +  N₂ gas and (b) sulfur vapor.

(a)

(b)