Simulation and Experimental Study of Photogeneration and Recombination in Amorphous-Like Silicon Thin Films Deposited by 27.12 MHz Plasma-Enhanced Chemical Vapor Deposition

Table 1

Deposition conditions of the intrinsic and doped a-Si:H-like layers.

Deposition condition	p-type a-SiC:H	Buffer layer	Intrinsic layer	n-type layer
Power (W)	10	10	10	10
Pressure (Pa)	90	90	90	60
E/S (mm)	20	20	30	25
Temperature (°C)	200	200	200	200
SiH4 flow rate (sccm)	20	20	40	40
H2 flow rate (sccm)	40	40	160	80
CH4 flow rate (sccm)	18	18	—	—
B2H6 flow rate (sccm)	5	—	—	—
PH3 flow rate (sccm)	—	—	—	5
Layer thickness (nm)	10	6	200–400	30