Growth of CZTS Thin Films by Cosputtering of Metal Targets and Sulfurization in H₂S

Table 1

Different sputtering methods used for depositing CZTS thin films.

Sputtering methods	Targets	Sulfurization conditions	References
RF cosputtering	Cu, ZnS, SnS	H2S (20%) + N2 at 580°C for 3 h	[7]
RF sputtering	CZTS (sintered with Cu2S : ZnS : SnS2 = 1 : 1 : 1)	Annealed at 400°C/30 min during deposition	[8]
Dc reactive sputtering	Cu : Zn : Sn = 2 : 1 : 1; (H2S + Ar) at 500°C for 60 min	—	[12]
Sputtering (layer by layer)	Cu, Zn, Sn	S at 250°C, film at 570°C for 20 min	[13]
RF cosputtering	Cu2S, ZnS, SnS2	Ar + S2 (g) at 250–400°C for 1 h	[14]
RF cosputtering	CuSn (60 : 40), ZnS	S (2 mg) at 520°C for 1 h	[15]
Reactive sputtering (50% H2S/Ar)	Cu, Zn, Sn	Annealed at 40 mtorr, 550°C 10% H2S/Ar mixture	[16]
Simultaneous RF sputtering	Cu2S, ZnS, SnS2	Annealed under sulfur vapor; sulfurization temp was 550, 600, and 650°C	[17]
Simultaneous (DC, RF) sputtering	Cu, ZnS, SnS	H2S diluted with 97% N2, annealed at 500°C for 10 min	[18]