RF Magnetron Sputtering Aluminum Oxide Film for  Surface Passivation on Crystalline Silicon Wafers

<table>Minority carrier lifetime mappings and PL images of <svg height="11.125" id="M5" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 66.612503 11.125" width="66.612503" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> mm<sup>2</sup> CZ wafers passivated by RF magnetron sputtered aluminum oxide at different sputtering powers and after a 30 min postannealing at 500°C in N<sub>2</sub> ambient. Upper row: minority carrier lifetime mappings. Lower row: PL images.</table>

International Journal of Photoenergy

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Figure 1

Figure 1: RF Magnetron Sputtering Aluminum Oxide Film for  Surface Passivation on Crystalline Silicon Wafers 