RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers
Figure 5
The XPS element composition depth profile of a sputtered aluminum oxide film at the power of 1000 W and after postannealing at 500°C in N2 ambient for 30 min as related to the etch time. The vertical dashed lines mark the approximate location of the interfacial layer between the aluminum oxide film and Si substrate.
