Thin Film CIGS Solar Cells, Photovoltaic Modules, and the Problems of Modeling

Table 4

Explanation of the symbols used to describe the simulation parameters.

Parameter	Explanation
𝐷	Layer thickness
𝜀𝑅	Permittivity constant
𝜒	Electron affinity
𝑁𝐶/𝑁𝑉	Effective density of states in the conduction /valence band
𝜇𝑛/𝜇𝑛	Mobility of electrons/holes
𝜎𝑛/𝜎𝑝	Capture cross-section of electrons/holes
𝑁𝐷/𝑁𝐴	Doping concentration
𝑁𝑡	Defect concentration
𝜙𝐵	Potential barrier height
𝑆𝑛/𝑆𝑝	Surface recombination velocity of electrons/holes