The Effect of Ga₂Se₃ Doping Ratios on Structure, Composition, and Electrical Properties of CuIn_0.5 Ga_0.5Se₂ Absorber Formed by Thermal Sintering

Table 1

Data of CIGS samples sintered at various doping ratios of Ga₂Se₃.

Parameter	Samples
	CIS	CIGS-1	CIGS-2	CIGS-3	CIGS-4
Cu2Se : In2Se3: Ga2Se3	1 : 5.67 : 0	1 : 5.67 : 1	1: 5.67: 2	1 : 5.67 : 3	1 : 5.67 : 4
Cu (at.%)	24.80	30.86	28.32	25.67	21.01
In (at.%)	25.12	16.70	15.44	12.36	10.48
Ga (at.%)	0.00	4.35	7.09	13.56	17.93
Se (at.%)	50.08	48.09	49.15	48.41	50.59
Mole ratio of Cu	0.99	1.23	1.13	1.03	0.84
Mole ratio of In	1.00	0.67	0.62	0.49	0.42
Mole ratio of Ga	0.00	0.17	0.28	0.54	0.72
Mole ratio of Se	2.0	1.92	1.97	1.94	2.02
Ga/(In + Ga)	0.00	0.21	0.31	0.52	0.63
Cu/(In + Ga)	0.99	1.47	1.26	0.99	0.74
Resistively (ohm-cm)	44.8	0.408	6.89	3.77	41.8
Carrier concentration (cm^−3)	2.44𝐸+15	6.25𝐸+18	5.64𝐸+16	1.15𝐸+18	1.66𝐸+17
(112) plane	26.575°	26.675°	26.975°	27.075°	27.175°
(220)/(204) plane	44.175°	44.425°	44.725°	44.975°	45.125°
(312)/(116) plane	52.325°	52.575°	53.125°	53.325°	53.525°