Wide-Gap p-𝜇c-Si_1−𝑥O_𝑥:H Films and Their Application to Amorphous Silicon Solar Cells

Table 1

Deposition condition for p-𝜇c-Si_1−𝑥O_𝑥:H films.

Parameters	Values
Gas flow
SiH4	2.4 sccm
H2	200–360 sccm
TMB (3%)	1.2 sccm
CO2	0–1.2 sccm
Power density	83 mW/cm^2
Deposition pressure	500 mTorr
Substrate temperature	180°C