Optical and Electrical Effects of p-type μc-SiO_x:H in Thin-Film Silicon Solar Cells on Various Front Textures

Figure 9

(a) Efficiency η, (b) fill factor (FF), (c) open circuit voltage 𝑉_oc, and (d) short-circuit current density 𝐽_sc of a-Si:H solar cells with p-type μc-Si:H (triangles) and p-type μc-SiO_x:H (circles) deposited on various front TCOs consisting of type A (HCl etched ZnO:Al); type B (first HCl subsequently HF etched ZnO:Al); type C (first HF subsequently HCl etched ZnO:Al); and type D (Asahi type U SnO₂:F). The dashed line represents solar cell characteristics of an a-Si:H solar cell without any contact layer, that is, only a p-type a-SiC:H layer.

(a)

(b)

(c)

(d)