Device Modeling of the Performance of Cu(In,Ga)Se₂ Solar Cells with V-Shaped Bandgap Profiles

Table 1

Base parameters for CIGS numerical model.

	AZO	i-ZnO	CdS	CIGS
Thickness (nm)	500	50	50	2000
𝜀	9	9	10	13.6
𝜇𝑛 (cm^2/Vs)	50	50	10	300
𝜇𝑝 (cm^2/Vs)	5	5	1	30
𝑁A (1/cm^3)	0	0	0	8.𝐸+16
𝑁D (1/cm^3)	1.𝐸+20	1.𝐸+17	5.2𝐸+16	0
𝐸𝑔 (eV)	3.3	3.3	2.4	grading
𝜒 (eV)	4	4	3.75	3.89

𝜀, dielectric constant; 𝜇_𝑛, electron mobility; 𝜇_𝑝, hole mobility; 𝑁_A, effective density of states in conduction band; 𝑁_D, effective density of states in valence band; 𝐸_𝑔, bandgap energy; 𝜒, electron affinity.