Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production

<table>Absorption coefficient at 1.2 eV as a function of substrate temperature for different silane concentrations of the intrinsic a-Si:H layer.</table>

International Journal of Photoenergy

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Figure 5

Figure 5: Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production 

Figure 5 | Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production 