Research Article
Performance Improvements of Selective Emitters by Laser Openings on Large-Area Multicrystalline Si Solar Cells
Figure 3
Lifetime mapping of mc-Si wafer after PECVD silicon nitride (SixNy), with laser opening power of (a) 5 J/cm2 ( μs), (b) 3.5 J/cm2 ( μs), (c) 2 J/cm2 ( μs), and (d) reference cell ( μs) without selective emitter (SE).