Research Article

Performance Improvements of Selective Emitters by Laser Openings on Large-Area Multicrystalline Si Solar Cells

Table 1

The variation of the average lifetimes (τ, in μs) of mc-Si wafer corresponds to different processes for laser fluences (J/cm2) of 5, 3.5, 2, and 0 (as a Ref. cell) after steps of acid etching, laser ablation, ARC, and passivation. The average lifetimes for the acid etching step of all samples are 7.36 μs.

After steps ofSE1 (5 J/cm2)SE2 (3.5 J/cm2)SE3 (2 J/cm2)Reference cell

Acid etching7.367.367.367.36
Laser ablation4.5845.5746.097
ARC and passivation6.3567.1628.0828.012