Effect of Electrodeposition Potential on Composition of CuIn_1−xGa_xSe₂ Absorber Layer for Solar Cell by One-Step Electrodeposition

Figure 6

(a) SEM image and corresponding compositional mapping of (b) Cu, (c) In, (d) Ga, and (e) Se of the CIGS film prepared at −1350 mV via electrodeposition.

(a)

(b)

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(e)