Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells

Table 2

Properties of μc-Si_1−𝑥Ge_𝑥:H absorber and the corresponding performance of single-junction cells with different 𝑅_GeH4 of 0, 3.7%, 5%, and 6.8%. The 𝑋_𝐶 of these cells was kept at approximately 55%.

𝑅GeH4	𝑅H2	[Ge] (at.%)	𝐸04 (eV)	QE800nm (%)	𝑉OC (mV)	𝐽SC (mA/cm^2)	FF (%)	Eff. (%)
0	81.0	0	1.96	26.6	540	17.38	71.0	6.67
3.7	104.8	8.8	1.89	28.3	490	17.16	62.2	5.23
5.0	109.5	13.2	1.85	35.4	460	18.50	59.3	5.04
6.8	166.1	18.0	1.83	31.0	370	17.27	53.0	3.83