Growth of Anodic Aluminum Oxide Templates and the Application in Fabrication of the BiSbTe-Based Thermoelectric Nanowires

Table 2

Effects of pulse deposition parameters on the composition of the (Bi,Sb)_2−𝑥Te_3+𝑥 materials; (a) the bias voltage was set at −0.4 V, 𝑇_on was set at 0.2 s, and 𝑇_off was changed from 0.1 s to 4 s. (b) 𝑇_on and 𝑇_off were set at 0.2 s and 1 s, and the pulse voltage was changed.

Different 𝑇off	Pulse (voltage = −0.4 V, 𝑇on = 0.2 s)			Different voltage (V)	Pulse (𝑇on = 0.2 s, 𝑇off = 1 s)
	Sb	Te	Bi		Sb	Te	Bi
𝑇off = 0.1 s	7.09	31.29	61.63	0.0 V	—	—	—
𝑇off = 0.4 s	7.71	41.05	51.25	−0.2 V	—	—	—
𝑇off = 1 s	12.02	69.43	18.54	−0.3 V	27.16	66.60	5.59
𝑇off = 1.6 s	7.22	79.62	13.16	−0.4 V	32.88	56.95	10.17
𝑇off = 2 s	5.77	84.06	10.17	−0.5 V	24.38	56.13	19.49
𝑇off = 4 s	6.24	86.30	7.46	−0.6 V	25.36	51.31	23.33