Laser Enhanced Hydrogen Passivation of Silicon Wafers

Figure 2

PL images (a) before and (b) after the laser annealing process for samples with the hotplate held at room temperature, a laser power density of 1.83 × 10³ W/cm² with a scan speed of 15 mm/s. The rectangle indicates the laser processed region. (c) The PL counts along the dark line on image are presented (b). Please note that PL imaging (a) was taken with an exposure time 1 s and (b) was taken with an exposure time 0.5 s.

(a)

(b)

(c)