Laser Enhanced Hydrogen Passivation of Silicon Wafers

Figure 4

The laser damage shown in PL image before (a) and after (b) the laser annealing process for a laser power density of 4.08 × 10³ W/cm² with a scan speed of 6 mm/s and a hotplate held at room temperature. The dashed line rectangle indicates the laser processed region. The black line is used to indicate the PL counts distribution across the sample. (c) The PL counts variation along the black line.

(a)

(b)

(c)