Research Article
Laser Enhanced Hydrogen Passivation of Silicon Wafers
Figure 6
The PL image before (a) and after (b) the laser annealing process for a laser power density of 3.26 × 102 W/cm2 with a scan speed of 15 mm/s and a hotplate held at 723 K. The dashed line rectangle indicates the laser processed region.
| (a) |
| (b) |