Effects of Sheet Resistance on mc-Si Selective Emitter Solar Cells Using Laser Opening and One-Step Diffusion

Table 1

Average lifetime of six SE samples at different check-point stages, which are surface texturization, dry oxidation, laser opening and mask removal, and POCl₃ diffusion with ARC deposition, separately. is heavily doped sheet resistance, and is lightly doped sheet resistance (Ω/sq); values inside parentheses are measured.

/ (Ω/sq)	Average lifetime (μs), one significant digit
	Surface texturization	Dry oxidation	Laser opening and mask removal	POCl3 diffusion/ARC deposition
40/75, for SE1	7	7.2	5.5	8.3, (8.339)
40/81, for SE2	7	7.6	5.9	8.7, (8.707)
40/96, for SE3	7	7.8	7.1	9.2, (9.168)
50/83, for SE4	7	7.2	5.5	8.2, (8.236)
50/91, for SE5	7	7.6	5.9	8.7, (8.723)
50/105, for SE6	7	7.8	7.1	9.3, (9.313)