Graded Carrier Concentration Absorber Profile for High Efficiency CIGS Solar Cells

Table 4

Explanation of the parameters used during the simulations.

Parameter	Explanation
	Layer thickness
	Permittivity constant
	Electron affinity
	Effective density of states in the conduction/valence band
	Mobility of electrons/holes
	Capture cross section of electrons/holes
	Doping concentration
	Defect concentration
	Potential barrier height
	Surface recombination velocity of electrons/holes