Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

Figure 2

(a) XRD patterns of ITO thin films deposited using fixed oxygen/argon ratio (0.03) and annealed at various temperatures (as-grown/100°C/200°C/300°C/400°C), (b) XRD intensities of (222) and (400) planes (I₂₂₂ and I₄₀₀), and (c) total crystallinity obtained by summing intensities of XRD peaks (I₂₂₂ + I₄₀₀) and ratio of XRD peak intensities (I₂₂₂/I₄₀₀).

(a)

(b)

(c)