Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

Figure 4

(a) Average transmission (800–1200 nm) and resistivity of films deposited at a fixed oxygen/argon ratio of 0.03 and annealed at various temperatures (as-grown/100°C/200°C/300°C/400°C), (b) average transmission (800–1200 nm) and carrier concentration of films deposited at a fixed oxygen/argon ratio of 0.03 and annealed at various temperatures (as-grown/100°C/200°C/300°C/400°C), and (c) average transmission (800–1200 nm) and mobility of films deposited at a fixed oxygen/argon ratio of 0.03 and annealed at various temperatures (as-grown/100°C/200°C/300°C/400°C).

(a)

(b)

(c)