Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization

Figure 5

Schematic of Si heterogeneous nucleation during AIC with a vertical distribution of Si concentration in the sample. is the atomic concentration in the a-Si layer, is the Si concentration at the bottom of the membrane, and is the Si concentration in the Al layer. The crystal orientation of nuclei is determined by the interfacial energy between Si and the underlayer.