Research Article
New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency
Table 2
Material parameters used in the numerical analysis for the nano-CdS:O/CdTe cell.
| | Parameter | Material layer | | n-SnO2 | n-ZTO | n-CdS:O | p- () | p-CdTe | ZnTe/Cu2Te/p+-CdTe |
| | Thickness (μm) | 0.1 | 0.2 | 0.01–0.1 | 0.0–0.3 | 0.6–2 | 0.1 |
| | Dielectric constant | 9.0 | 9.0 | 10.0 | 9.4 | 9.4 | 14/10/10 |
| | Electron mobility, (cm2/Vs) | 100 | 52 | 100 | 320 | 320 | 100/500/110 |
| | Hole mobility, (cm2/Vs) | 25 | 3 | 25 | 40 | 40 | 10/100/70 |
| | Electron and hole concentration, , (cm−3) | 1017 | 1019 | 1.1 × 1018 | 2 × 1014 | 1016/1016/1017 | 7.5 × 1019/1021/7.9 × 1019 |
| | Band gap, (eV) | 3.60 | 3.35 | 2.80 | 1.47 | 1.50 | 2.26/1.18/1.45 |
| | Density of states at conduction band, (cm−3) | 2.2 × 1018 | 2.1 × 1018 | 2.2 × 1018 | 7.9 × 1017 | 7.9 × 1017 | 7.8/7.8/7.9 (×1017) |
| | Density of states at valance band, (cm−3) | 1.8 × 1019 | 1.5 × 1019 | 1.8 × 1019 | 1.8 × 1019 | 1.8 × 1019 | 1.6/1.6/1.8 (×1019) |
| | Electron affinity, (eV) | 4.55 | 4.50 | 4.50 | 4.26 | 4.26 | 3.65/4.20/4.28 |
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