Research Article
Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD
Table 2
Summary of the electrical properties of GZO films prepared at 400°C on various ZnO buffer layer thickness.
| | Samples | Resistivity (Ω cm) | Mobility (cm2 V−1 s−1) | Bulk concentration (cm−3) |
| | GZO (800 nm)/ZnO (30 nm) | | 16.25 | | | GZO (800 nm)/ZnO (212 nm) | | 16.10 | | | GZO (800 nm)/ZnO (422 nm) | | 16.30 | | | GZO (800 nm)/ZnO (652 nm) | | 16.35 | | | GZO (800 nm)/ZnO (766 nm) | | 16.45 | |
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