Perovskite Thin Film Solar Cells Based on Inorganic Hole Conducting Materials

Table 1

Device parameters for high-performance organometallic lead halide perovskite solar cells (PSCs) based on different inorganic hole transport materials (HTMs), the band gap, and deposition method of these HTMs.

HTM	Band gap (eV)	Deposition method	Voc (V)	Jsc (mA/cm^2)	FF (%)	PCE (%)	Reference
NiO	3.5	ALD	1.04	21.87	72	16.40	[37]
Cu:NiO	x > 3.5	Solution-processed	1.12	19.17	73	15.40	[24]
Mg:Li:NiO	x > 3.5	Solution-processed	1.07	20.62	75	18.40	[36]
CuI	3.1	Solution-processed	1.04	21.06	62	13.58	[40]
CuSCN	3.8	Electrodeposition	1.00	21.90	76	16.60	[46]
CuO	1.3	Solution-processed	1.06	15.82	72	12.16	[52]
Cu2O	2.1	Solution-processed	1.07	16.52	75	13.35	[52]
MoO3	3.4	Thermal decomposition	1.00	21.49	69	14.87	[53]
VOx	2.42	Solution-processed	0.90	22.29	71	14.23	[55]