International Journal of Photoenergy / 2024 / Article / Tab 1 / Research Article
Investigation of the Performance of a Sb2 S3 -Based Solar Cell with a Hybrid Electron Transport Layer (h-ETL): A Simulation Approach Using SCAPS-1D Software Table 1 SCAPS-1D input parameters of the materials used in the simulation.
Parameters FTO ZnO TiO2 Sb2 S3 Spiro-OMeTAD Thickness w (μ m) 0.27 0.015 [23 ] 0.04 [23 ] 0.190 [23 ] 0.150 [23 ] Bandgap (eV) 3.5 [27 ] 3.3 [23 ] 3.2 [23 ] 1.7 [23 ] 3 [23 ] Electronic affinity (eV) 4.7 [23 ] 4.3 [23 ] 4.2 [23 ] 3.7 [23 ] 2.45 [23 ] Dielectric constant 9 [44 ] 9 [44 ] 9 [43 ] 19 3 [48 ] Conduction band state density (cm-3 ) [44 ] [44 ]1019 [27 ] 1019 [40 ] 1019 [48 ] Valence band state density (cm-3 ) [44 ] [44 ]1019 [27 ] 1019 [40 ] 1019 [48 ] Electron thermal velocity (cm/s) [49 ]107 [44 ] 107 [27 ] 107 [14 ] 107 [27 ] Hole thermal velocity (cm/s) [49 ]107 [44 ] 107 [27 ] 107 [14 ] 107 [27 ] Electron mobility (cm2 /Vs) 33 [44 ] 50 [44 ] 20 [43 ] [47 ]10-4 [50 ] Hole mobility (cm2 /Vs) 8 [44 ] 25 [44 ] 1 [2 ] 10 [47 ] 10-4 [50 ] Donor density (cm-3 ) 1018 [44 ] 1018 [44 ] 1017 [2 ] — — Acceptor density (cm-3 ) — — — [47 ] [46 ]Defect properties Defect type Neutral Neutral Neutral Neutral Neutral Capture cross-section of electrons/holes (cm2 ) 10-19 10-19 10-19 10-15 Energy distribution Single Single Single Single Single Reference for defective energy level Above Ev Above Ev Above Ev Above Ev Above Ev Energy level with respect to a reference (eV) 0.6 0.6 0.6 0.85 0.6 Total defect (1/cm3 ) 1017 [44 ] 1017 [44 ] 1015 [43 ] 1015 [50 ] TiO2 /Sb2 S3 interface properties Defect type Neutral Capture cross-section of electrons/holes (cm2 ) Energy distribution Single Reference for defective energy level Midgap Energy level with respect to a reference (eV) 0.6 Total defect (1/cm2 ) Contact properties Front contact Rear contact Electron surface recombination velocity (cm/s) 105 105 Hole surface recombination velocity (cm/s) 107 107 Metal work function (eV) 4.7 5.2 [45 ] Majority carrier barrier height relative to (eV) -0.03 0.25 Majority carrier barrier height relative to or -0.0504 0.2083