Research Article

Investigation of the Performance of a Sb2S3-Based Solar Cell with a Hybrid Electron Transport Layer (h-ETL): A Simulation Approach Using SCAPS-1D Software

Table 1

SCAPS-1D input parameters of the materials used in the simulation.

ParametersFTOZnOTiO2Sb2S3Spiro-OMeTAD

Thickness w (μm)0.270.015 [23]0.04 [23]0.190 [23]0.150 [23]
Bandgap (eV)3.5 [27]3.3 [23]3.2 [23]1.7 [23]3 [23]
Electronic affinity (eV)4.7 [23]4.3 [23]4.2 [23]3.7 [23]2.45 [23]
Dielectric constant 9 [44]9 [44]9 [43]193 [48]
Conduction band state density (cm-3) [44] [44]1019 [27]1019 [40]1019 [48]
Valence band state density (cm-3) [44] [44]1019 [27]1019 [40]1019 [48]
Electron thermal velocity (cm/s) [49]107 [44]107 [27]107 [14]107 [27]
Hole thermal velocity (cm/s) [49]107 [44]107 [27]107 [14]107 [27]
Electron mobility (cm2/Vs)33 [44]50 [44]20 [43] [47]10-4 [50]
Hole mobility (cm2/Vs)8 [44]25 [44]1 [2]10 [47]10-4 [50]
Donor density (cm-3)1018 [44]1018 [44]1017 [2]
Acceptor density (cm-3) [47] [46]
Defect properties
 Defect typeNeutralNeutralNeutralNeutralNeutral
 Capture cross-section of electrons/holes (cm2)10-1910-1910-1910-15
 Energy distributionSingleSingleSingleSingleSingle
 Reference for defective energy level Above EvAbove EvAbove EvAbove EvAbove Ev
 Energy level with respect to a reference (eV)0.60.60.60.850.6
 Total defect (1/cm3)1017 [44]1017 [44]1015 [43]1015 [50]
TiO2/Sb2S3 interface properties
 Defect typeNeutral
 Capture cross-section of electrons/holes (cm2)
 Energy distributionSingle
 Reference for defective energy level Midgap
 Energy level with respect to a reference (eV)0.6
 Total defect (1/cm2)
Contact propertiesFront contactRear contact
 Electron surface recombination velocity (cm/s)105105
 Hole surface recombination velocity (cm/s)107107
 Metal work function (eV)4.75.2 [45]
 Majority carrier barrier height relative to (eV)-0.030.25
 Majority carrier barrier height relative to or -0.05040.2083