Research Article
Maximizing Conversion Efficiency: A Numerical Analysis on P+ a-SiC/i Interface/n-Si Heterojunction Solar Cells with AMPS-1D
Table 2
Electronic properties used in simulation.
| | Electronic properties | P+ a-SiC [51] | N+/i intrinsic [52–56] | n-Si [57] | Defects [58] | EBL [59] |
| | Thickness (nm) | 15-20 | 8000 | 15-100 | 50 nm | 50 nm | | Relative permittivity, | 11.9 | 11.9 | 11.9 | 11.9 | 11.9 | | Electron mobility, (cm2/v-s) | 10.0 | 1350.0 | 40.0 | 20.0 | 40.0 | | Hole mobility, (cm2/v-s) | 1.0 | 450.0 | 4.0 | 2.0 | 4.0 | | Acceptor and donor concentration (cm-3) | | — | | — | | | Bandgap (eV) | 2.20 | 2.70 | 1.12 | 1.82 | 2.10 | | Effective density of states in conduction band (cm-3) | | | | | | | Effective density of states in valence band (cm-3) | | | | | | | Electron affinity (eV) | 3.70 | 3.80 | 4.05 | 3.80 | 3.85 |
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