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International Journal of Polymer Science
Volume 2012 (2012), Article ID 852063, 10 pages
http://dx.doi.org/10.1155/2012/852063
Review Article

Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors

1Electronic Material Research Division, Osaka Municipal Technical Research Institute, Osaka 536-8553, Japan
2JST Innovation Plaza Osaka, Osaka 594-1131, Japan
3Department of Physics and Electronics, Osaka Prefecture University, Osaka 599-8531, Japan

Received 11 August 2012; Accepted 11 September 2012

Academic Editor: Yoshiro Kaneko

Copyright © 2012 Kimihiro Matsukawa et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Kimihiro Matsukawa, Mitsuru Watanabe, Takashi Hamada, Takashi Nagase, and Hiroyoshi Naito, “Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors,” International Journal of Polymer Science, vol. 2012, Article ID 852063, 10 pages, 2012. doi:10.1155/2012/852063