Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="852063.fig.003a" src="https://static.hindawi.com/articles/ijps/volume-2012/852063/figures/852063.fig.003a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b> In MeOH </td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="852063.fig.003b" src="https://static.hindawi.com/articles/ijps/volume-2012/852063/figures/852063.fig.003b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b>In Toluene</td></tr></table></td></tr></table>

<table><sup>1</sup>H-NMR spectra of PMSQ;  (a) prepared in methanol, (b) prepared in toluene.</table>

International Journal of Polymer Science

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Figure 3

Figure 3: Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors 