Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors

<table>Transfer characteristics of P3HT TFT fabricated on glass substrate (solid line) and PEN substrate (dashed line) at <svg height="15.25" id="M28" style="vertical-align:-3.27605pt" version="1.1" viewbox="0 0 68.637497 15.25" width="68.637497" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> V. Inset: An image of TFT device on PEN substrate (5 × 5 cm<sup>2</sup>).</table>

International Journal of Polymer Science

fig8

Figure 8

Figure 8: Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors 