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International Journal of Polymer Science
Volume 2012 (2012), Article ID 852063, 10 pages
Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors
1Electronic Material Research Division, Osaka Municipal Technical Research Institute, Osaka 536-8553, Japan
2JST Innovation Plaza Osaka, Osaka 594-1131, Japan
3Department of Physics and Electronics, Osaka Prefecture University, Osaka 599-8531, Japan
Received 11 August 2012; Accepted 11 September 2012
Academic Editor: Yoshiro Kaneko
Copyright © 2012 Kimihiro Matsukawa et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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