Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors

Table 2

Mobility (𝜇) and 𝑉_th with respect to 𝑉_𝐺 sweep of P3HT TFTs and water contact angle on different insulator surfaces. The alkyltrichlorosilane SAMs are represented as number of alkyl units (𝑛).

Gate insulator	𝜇 (cm^2 V^−1 s^−1)	Water contact; angle (degree)	𝑉th (V)
PMSQ	7.1 × 10^−3	93	−0.3
SiO2	7.8 ×10^−4	25	−2.0
𝑛 = 2	4.2 × 10^−3	89	−2.5
𝑛 = 6	1.2 × 10^−2	103	−2.5
𝑛 = 12	3.0 × 10^−2	106	−2.4
𝑛 = 18	3.3 × 10^−2	107	−2.4