Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors

Table 4

Surface properties of co-PMSQ thin films.

Additive [R-Si(OMe)3]		Contact angle	Surface free energy
R	mol%	(degree)	(mJ m^−2)
None	—	86.1	28.2
–(CH2)17CH3	0.5	87.1	28.5
–(CH2)2Ph	0.5	89.6	27.1
–(CH2)2(CF2)5CF3	0.5	92.9	24.3
–(CH2)2(CF2)5CF3	1.0	97.1	22.3