Table 4: Percentages of ion-implanted resist damaged layer by SEM and stripping of ion-implanted resist using chemicals.

SampleResist removal (wet ozone) damaged layer/totalSEM observation damaged layer/totalResist removal (chemicals) damaged layer/total

10 keV (B ions)0.040.090.08
70 keV (B ions)0.250.600.50
150 keV (B ions)0.720.60

10 keV (P ions)0.030.03
70 keV (P ions)0.340.25
150 keV (P ions)0.460.36