On the Use of Magnetic RAMs in Field-Programmable Gate Arrays
Figure 12
Simulation results obtained
from the first structure of the TAS-MRAM
in 0.35m CMOS combined with the TAS-MTJ technology, under a supply
voltage . The signal “WR” represents the signal called “write/read”
as shown in the TAS-MRAM cell (see Figure 5). The signals and
are the write current pulses applied to the MTJ1 and the
MTJ2, respectively.
