Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy

<table> Variation of the 520.5 cm<sup>−1</sup> OPM intensity with film thickness calculated for poly-Si film on glass.</table>

International Journal of Spectroscopy

Figure 9: Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy 