Raman Spectroscopy for Quantitative Analysis of Point Defects and Defect Clusters in Irradiated Graphite

Figure 17

The dimensional change along the c-axis under 300 keV electron irradiation at room temperature [17] and the simulation with the dislocation accumulation model with several values of 𝑞. The dimensional change is assumed to increase proportionally with the amount of di-interstitials accumulated between the basal planes. The values of 𝐽 correspond to the c-axis expansion ratio per atom of di-interstitials.