Review Article

Magnetic Mn-Doped Ge Nanostructures

Figure 11

Control of ferromagnetism of Mn0.05Ge0.95 quantum dots by applying electric field at 50 K ((a)~(c)), 77 K ((d)~(f)), and 100 K ((g)~(i)). (a), (d), and (g) Hysteresis loops with zero and negative bias of −10, −20 and −40 V on the gate; (b), (e), and (h) the hysteresis loops with zero and positive bias of +10, +20, and +40 V; (c), (f), and (i) remnant moments with respect to the gate bias. Insets of (c), (f) and (i) are enlarged figures from the central part of (b), (e), and (h) to clearly show the change of remnant moments, respectively. It is found that both the saturation and remnant moments can be manipulated by applying biases on the MOS gate at 50, 77, and 100 K.
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