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ISRN Materials Science
Volume 2013 (2013), Article ID 710798, 7 pages
http://dx.doi.org/10.1155/2013/710798
Research Article

Influence of Oxygen on Zinc Oxide Films Fabricated by Ion-Beam Sputter Deposition

1Department of Physics, Fu Jen Catholic University, Hsinchuang, New Taipei City 24205, Taiwan
2Graduate Institute of Applied Science and Engineering, Fu Jen Catholic University, Hsinchuang, New Taipei City 24205, Taiwan

Received 25 June 2013; Accepted 30 July 2013

Academic Editors: Z. Jiang and H. Saxén

Copyright © 2013 Jin-Cherng Hsu and Yueh-Sheng Chiang. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In this study, zinc oxide films were deposited by an ion-beam sputter deposition in various oxygen partial pressures at room temperature. The films changed the structures from amorphous to polycrystalline with increasing the oxygen partial pressure ( ). The optimal was found at Torr because the film prepared at the oxygen partial pressure had the lowest resistivity and the highest transparence in the visible light region. The lowest resistivity results from a great number of oxygen vacancy sites formed on the polycrystalline surface as exposed to the atmosphere. Moreover, the film has the highest XRD peak intensity, smallest FWHM diffraction peak, smallest -spacing, and smallest biaxial stress.