Table 1: Deposition parameters for growth of AlN thin film.

ParameterNumerical value

Base pressure  mbar
Power density of cathode3.3 W/cm2
Pulse frequency125 kHz
Duty cycle75%
Target-to-substrate distance7.5 cm
Total gas (Ar + N2) flow rate10 sccm
Substrate temperatureNo external heating (~100°C)