Research Article
Thermodynamics and Oxidation Behaviour of Crystalline Silicon Carbide (3C) with Atomic Oxygen and Ozone
Table 2
Equilibrium O, O3 pressures for oxidation of SiC, Si, and C.
| Reaction | 1000 K | 2000 K | 3000 K | log |
log | log |
log | log |
log |
| 1 | −23.66 | −52.61 | −9.05 | −24.89 | −4.20 | −15.77 | 2 | −18.22 | −36.30 | −9.63 | −26.64 | −6.67 | −23.17 | 3 | −24.87 | −56.24 | −10.04 | −27.88 | −5.13 | −18.54 | 4 | −27.17 | −63.15 | −9.74 | −26.97 | −4.01 | −15.20 | 5 | −18.82 | −38.11 | −8.44 | −23.07 | −4.92 | −17.94 | 6 | −16.18 | −30.17 | −8.61 | −23.60 | −5.98 | −21.11 | 7 | −18.44 | −36.95 | −7.72 | −20.92 | −4.29 | −16.05 | 8 | −16.85 | −32.19 | −9.38 | −25.89 | −7.15 | −24.62 | 9 | −19.59 | −40.41 | −9.88 | −27.39 | −6.18 | −21.72 | 10 | −28.88 | −68.27 | −10.37 | −28.87 | −4.11 | −15.50 | 11 | −20.26 | −42.43 | −10.65 | −29.69 | −7.36 | −25.23 | 12 | −20.14 | −42.07 | −8.35 | −22.81 | −4.40 | −16.35 |
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