A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching
Figure 5
Williamson-Hall plot for the skew-symmetric (10.1), (10.2), (10.3), (10.4), and (10.5) reflections of HVPE GaN on sapphire (the same sample and spot as in Figure 4). The twist angle is determined to be 2.03 mrad.
