Review Article

Magnetic Mn-Doped Ge Nanostructures

Figure 10

Magnetic moment versus applied field under various biases from −30 to 30 V at 10 K. The obtained hysteresis is the largest under −30 V gate voltage, and the ferromagnetic phase is turned off under +30 V gate bias. The inset shows the spin-gated structure used to investigate C-V and gate-bias-dependent magnetic properties.
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